In situ growth of oxide thin film heterostructures by band flash evaporation MOCVD

A.A. Molodyk, M.A. Novozhilov, I.E. Graboy, O.Yu. Gorbenko, I.E. Korsakov, A.R. Kaul

The Electrochemical Society Proceedings Volume, v. 97-25, p.1152-1159 (1997)

ABSTRACT. Oriented oxide heterostructures including substrate, buffer and metal- conducting layers were prepared by band flash evaporation MOCVD, each in a continuous deposition run, and characterized by XRD, SNMS, HREM, measurements of the electric properties. Epitaxial heterostructures with buffer layers improving the structural match in the systems were obtained: (001)CeO2/(001)YSZ/(1-102)Al2O3, (001)CaRuO3/(001)PrOx/(001)YSZ, (001)CaRuO3/(001)CeO2/(001)YSZ, (001)CaRuO3/(001)CeO2/(1-102)Al2O3. Oriented ferroelectric PbTiO3 films were deposited on CaRuO3 electrode layers obtained. The properties of the multilayered films deposited in a continuous run and at several consequent attempts, with and without buffering, are compared.

Coordination Chemistry Laboratory